A flat-aluminum based voltage-programmable link for field-programmable devices

Author

Cohen, S.S. ; Gleason, E.F. ; Wyatt, P.W. ; Raffel, J.I.

Author_Institution

Lincoln Lab., MIT, Lexington, MA, USA

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

721

Lastpage

725

Abstract

A new metal-insulator-metal (MIM) structure has been developed for use in field-programmable gate arrays (FPGA´s) as a voltage-programmable link (VPL). The present capacitor structure relies on aluminum metallization; hence, it should be amenable to immediate application. The addition of minute amounts of titanium or molybdenum has been found to suppress hillock formation. The insulator, prepared by means of plasma-enhanced chemical vapor deposition (PECVD), comprises a sandwich of a nearly stoichiometric silicon dioxide interposed between two like layers of silicon-rich silicon nitride. This MIM structure has displayed characteristics desirable for use in the emerging FPGA technology including high density, very low on-resistance, reduced capacitance, low programming voltage, and the potential for further scaling to the sub-micron regime

Keywords

aluminium; logic arrays; metal-insulator-metal structures; metallisation; plasma CVD; silicon compounds; Al metallization; Al-SiN-SiO₂-SiN-Al; capacitance; field-programmable devices; gate arrays; hillock formation; metal-insulator-metal structure; on-resistance; plasma-enhanced chemical vapor deposition; programming voltage; sub-micron regime; voltage-programmable link; Aluminum; Field programmable gate arrays; Insulation; MIM capacitors; Metal-insulator structures; Metallization; Plasma applications; Plasma chemistry; Titanium; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285023

Filename

285023