Title :
An open tube method of Zn diffusion in III-V compounds
Author_Institution :
ITT Electro-Optical Products Division, Roanoke, VA
fDate :
5/1/1982 12:00:00 AM
Abstract :
A novel method for diffusing volatile impurities (such as Zn) in III-V compounds has been developed. The apparatus described here maintains an appropriate vapor pressure of Zn in a localized and confined manner in close proximity over the III-V compound wafer. This technique is used for diffusing Zn in InP.
Keywords :
Boats; Etching; Fabrication; III-V semiconductor materials; Impurities; Indium phosphide; Ion implantation; Niobium; Tin; Zinc;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25511
