Title :
A physical model of floating body thin film silicon-on-insulator nMOSFET with parasitic bipolar transistor
Author :
Yu, Hyun-Kyu ; Lyu, Jong-Son ; Kang, Sang-won ; Kim, Choong-ki
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
5/1/1994 12:00:00 AM
Abstract :
An analytical model for SOI nMOSFET with a floating body is developed to describe the Ids-Vds characteristics. Considering all current components in MOSFET as well as parasitic BJT, this study evaluates body potential, investigates the correlations among many device parameters, and characterizes the various phenomena in floating body: threshold voltage reduction, kink effect, output conductance increment, and breakdown voltage reduction. This study also provides a good physical insight on the role of the parasitic current components in the overall device operation. Our model explains the dependence of the channel length on the Ids-Vds characteristics with parasitic BJT current gain. Results obtained from this model are in good agreement with the experimental Ids-V ds curves for various bias and geometry conditions
Keywords :
electric breakdown of solids; insulated gate field effect transistors; semiconductor device models; semiconductor-insulator boundaries; silicon; thin film transistors; BJT current gain; Ids-Vds characteristics; bias conditions; body potential; breakdown voltage reduction; channel length; device parameter; floating body thin film silicon-on-insulator nMOSFET; geometry conditions; kink effect; output conductance increment; parasitic bipolar transistor; parasitic current components; physical model; threshold voltage reduction; Analytical models; Equations; Geometry; Impact ionization; Intrusion detection; MOSFET circuits; Semiconductor films; Semiconductor thin films; Silicon on insulator technology; Threshold voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
