Title :
In-situ low energy BF2+ion doping for silicon molecular beam epitaxy
Author :
Swartz, R.G. ; McFee, J.H. ; Voshchenkov, A.M. ; Finegan, S.N. ; Archer, V.D. ; O´Day, P.J.
Author_Institution :
Bell Laboratories, Holmdel, NJ
fDate :
5/1/1982 12:00:00 AM
Abstract :
An experimental study of the p-type ion dopant BF2+ in silicon molecular beam epitaxy (MBE) is described. BF2+ was used to dope MBE layers during growth to levels ranging from 1 × 1016/cm3to 4 × 1018/cm3over a growth temperature range of 650°C to 1000°C. The layers were evaluated using spreading resistance, chemical etching, and secondary ion mass spectroscopy. Complete dopant activation was observed for all growth temperatures. Remnant fluorine in the epitaxial layer was less than 2 × 1016/cm3in all cases. Diffused p-n junction diodes fabricated in BF2+-doped epitaxial material showed hard reverse breakdown characteristics.
Keywords :
Chemicals; Diodes; Electric breakdown; Epitaxial layers; Etching; Mass spectroscopy; Molecular beam epitaxial growth; P-n junctions; Silicon; Temperature distribution;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25513
