• DocumentCode
    1083222
  • Title

    In-situ low energy BF2+ion doping for silicon molecular beam epitaxy

  • Author

    Swartz, R.G. ; McFee, J.H. ; Voshchenkov, A.M. ; Finegan, S.N. ; Archer, V.D. ; O´Day, P.J.

  • Author_Institution
    Bell Laboratories, Holmdel, NJ
  • Volume
    3
  • Issue
    5
  • fYear
    1982
  • fDate
    5/1/1982 12:00:00 AM
  • Firstpage
    138
  • Lastpage
    140
  • Abstract
    An experimental study of the p-type ion dopant BF2+ in silicon molecular beam epitaxy (MBE) is described. BF2+ was used to dope MBE layers during growth to levels ranging from 1 × 1016/cm3to 4 × 1018/cm3over a growth temperature range of 650°C to 1000°C. The layers were evaluated using spreading resistance, chemical etching, and secondary ion mass spectroscopy. Complete dopant activation was observed for all growth temperatures. Remnant fluorine in the epitaxial layer was less than 2 × 1016/cm3in all cases. Diffused p-n junction diodes fabricated in BF2+-doped epitaxial material showed hard reverse breakdown characteristics.
  • Keywords
    Chemicals; Diodes; Electric breakdown; Epitaxial layers; Etching; Mass spectroscopy; Molecular beam epitaxial growth; P-n junctions; Silicon; Temperature distribution;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25513
  • Filename
    1482618
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083222