Title :
Analysis of the Double Laser Emission Occurring in 1.55-μm InAs–InP (113)B Quantum-Dot Lasers
Author :
Veselinov, Kiril ; Grillot, Frédéric ; Cornet, Charles ; Even, Jacky ; Bekiarski, Alexander ; Gioannini, Mariangela ; Loualiche, Slimane
Abstract :
In this paper, a theoretical model based on rate equations is used to investigate static and dynamic behaviors of InAs-InP (113)B quantum-dot (QD) lasers emitting at 1.55 mum. More particularly, it is shown that two modelling approaches are required to explain the origin of the double laser emission occurring in QD lasers grown on both, GaAs and InP substrates. Numerical results are compared to experimental ones by using either a cascade or a direct relaxation channel model. The comparison demonstrates that when a direct relaxation channel is taken into account, the numerical results match very well the experimental ones and lead to a qualitative understanding of InAs-InP (113)B QD lasers. Numerical calculations for the turn-on delay are also presented. A relaxation oscillation frequency as high as 10 GHz is predicted which is very promising for the realization of directly modulated QD lasers for high-speed transmissions.
Keywords :
III-V semiconductors; high-speed optical techniques; indium compounds; laser beams; optical modulation; quantum dot lasers; cascade relaxation channel model; direct relaxation channel model; double laser emission; frequency 10 GHz; high-speed transmissions; quantum-dot lasers; rate equations; relaxation oscillation frequency; turn-on delay; wavelength 1.55 mum; Delay; Equations; Gallium arsenide; Indium phosphide; Laser modes; Laser theory; Quantum cascade lasers; Quantum dot lasers; Quantum dots; Quantum well lasers; Double emission; InP; quantum dots (QDs); rate equations;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.2007.902386
