Title :
Overgrown silicon PBT´s: calculations and measurements
Author :
Schüppen, Andreas ; Marso, Michel ; Lüth, Hans
Author_Institution :
Res. Center, Daimler-Benz AG, Ulm, Germany
fDate :
5/1/1994 12:00:00 AM
Abstract :
The device parameters of overgrown silicon permeable base transistors (PBT´s) have been systematically investigated by two dimensional drift diffusion simulations and analytical calculations. Hence some design rules arise for optimizing the high frequency performance of PBT´s. The calculations indicate the source-drain distance as the essential PBT parameter, which should be kept below 200 nm in order to expect unity-current-gain frequencies fT over 50 GHZ. In addition, PBT´s with buried monocrystalline CoSi2-gates have been fabricated by high dose cobalt ion implantation through a grid-like mask into MOS-compatible n-type Si(100). Measurements revealed a transconductance of 70 mS/mm and a f T value of 6 GHz. The comparison between measured and simulated output characteristics shows good agreement
Keywords :
Schottky gate field effect transistors; bipolar transistors; elemental semiconductors; ion implantation; power transistors; semiconductor device models; silicon; solid-state microwave devices; 6 GHz; Si; buried monocrystalline CoSi2-gates; design rules; device parameters; grid-like mask; high frequency performance; ion implantation; output characteristics; permeable base transistors; source-drain distance; transconductance; two dimensional drift diffusion simulations; unity current gain frequency; unity-current-gain frequencies; Analytical models; Etching; Fabrication; Fingers; Frequency measurement; Gallium arsenide; Parasitic capacitance; Silicides; Silicon; Transconductance;
Journal_Title :
Electron Devices, IEEE Transactions on
