Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation

In this paper, we present a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 Å and 130 Å, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. This model, based on hole injection from the anode, accurately predicts Q_BD and t_BD behavior including a fluence in excess of 10⁷ C/cm² at an oxide voltage of 2.4 V for a 25 Å oxide. Moreover, this model is a refinement of and fully complementary with the well known 1/E model, while offering the ability to predict oxide reliability for low voltages