Title :
Hole injection SiO2 breakdown model for very low voltage lifetime extrapolation
Author :
Schuegraf, Klaus F. ; Hu, Chenming
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
In this paper, we present a model for silicon dioxide breakdown characterization, valid for a thickness range between 25 Å and 130 Å, which provides a method for predicting dielectric lifetime for reduced power supply voltages and aggressively scaled oxide thicknesses. This model, based on hole injection from the anode, accurately predicts QBD and tBD behavior including a fluence in excess of 107 C/cm2 at an oxide voltage of 2.4 V for a 25 Å oxide. Moreover, this model is a refinement of and fully complementary with the well known 1/E model, while offering the ability to predict oxide reliability for low voltages
Keywords :
dielectric thin films; electric breakdown of solids; reliability; semiconductor device models; semiconductor-insulator boundaries; silicon compounds; 1/E model; 25 to 130 A; SiO2; SiO2 breakdown model; breakdown characterization; dielectric lifetime; hole injection; low voltage lifetime extrapolation; oxide reliability prediction; scaled oxide thicknesses; Anodes; Breakdown voltage; Capacitors; Circuits; Dielectric breakdown; Electric breakdown; Extrapolation; Low voltage; Predictive models; Silicon compounds;
Journal_Title :
Electron Devices, IEEE Transactions on
