A model for 1/f noise in diffusion current based on surface recombination velocity fluctuations and insulator trapping

Author

Schiebel, Richard A.

Author_Institution

Central Res. Labs., Texas Instrum. Inc., Dallas, TX, USA

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

768

Lastpage

778

Abstract

In this paper we present a new model for low frequency 1/f noise in semiconductor diodes. The model describes noise in diffusion current due to fluctuations in surface recombination velocity. The fluctuations in surface recombination velocity are in turn caused by insulator trapping. We examine the model´s predictions for 1/f noise and its dependence on device geometry, temperature, surface potential, majority carrier concentration, and trap energy. Example calculations are performed for narrow band gap HgCdTe (E_G=0.125 eV at 77 K), for which this mechanism should be relevant

Keywords

carrier density; electron traps; electron-hole recombination; hole traps; random noise; semiconductor device models; semiconductor device noise; semiconductor diodes; HgCdTe; device geometry; insulator trapping; low frequency 1/f noise; majority carrier concentration; model; narrow band gap HgCdTe; semiconductor diodes; surface potential; surface recombination velocity fluctuations; temperature; trap energy; Fluctuations; Frequency; Geometry; Insulation; Low-frequency noise; Predictive models; Radiative recombination; Semiconductor device noise; Semiconductor diodes; Solid modeling;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285030

Filename

285030