Title :
Comparison of ultralow specific on-resistance UMOSFET structures: the ACCUFET, EXTFET, INVFET, and conventional UMOSFET´s
Author :
Syau, Tsengyou ; Venkatraman, Prasad ; Baliga, B.Jayant
Author_Institution :
Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA
fDate :
5/1/1994 12:00:00 AM
Abstract :
Three new ultralow specific on-resistance, vertical channel, power UMOSFET structures, with a trench (UMOS) gate extending all the way between N+ source and the N+ substrate (drain), are compared with the conventional UMOSFET structure. Specific on-resistances in the range of 100-250 μΩcm2 have been experimentally demonstrated for devices capable of supporting 25 V. This is due to current conduction via an accumulation and/or inversion layer formed under gate bias along the trench gate surface, resulting in the lowest specific on-resistance ever reported
Keywords :
accumulation layers; insulated gate field effect transistors; inversion layers; power transistors; 25 V; ACCUFET; EXTFET; INVFET; accumulation layer; current conduction; gate bias; inversion layer; trench gate surface; ultralow specific on-resistance UMOSFET structures; vertical channel power UMOSFET structures; Breakdown voltage; Disk drives; Doping; FETs; MOSFET circuits; P-n junctions; Power MOSFET; Power supplies; Rectifiers; Schottky diodes;
Journal_Title :
Electron Devices, IEEE Transactions on
