Comparison of ultralow specific on-resistance UMOSFET structures: the ACCUFET, EXTFET, INVFET, and conventional UMOSFET´s

Author

Syau, Tsengyou ; Venkatraman, Prasad ; Baliga, B.Jayant

Author_Institution

Dept. of Electr. & Comput. Eng., North Carolina State Univ., Raleigh, NC, USA

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

800

Lastpage

808

Abstract

Three new ultralow specific on-resistance, vertical channel, power UMOSFET structures, with a trench (UMOS) gate extending all the way between N⁺ source and the N⁺ substrate (drain), are compared with the conventional UMOSFET structure. Specific on-resistances in the range of 100-250 μΩcm² have been experimentally demonstrated for devices capable of supporting 25 V. This is due to current conduction via an accumulation and/or inversion layer formed under gate bias along the trench gate surface, resulting in the lowest specific on-resistance ever reported

Keywords

accumulation layers; insulated gate field effect transistors; inversion layers; power transistors; 25 V; ACCUFET; EXTFET; INVFET; accumulation layer; current conduction; gate bias; inversion layer; trench gate surface; ultralow specific on-resistance UMOSFET structures; vertical channel power UMOSFET structures; Breakdown voltage; Disk drives; Doping; FETs; MOSFET circuits; P-n junctions; Power MOSFET; Power supplies; Rectifiers; Schottky diodes;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285034

Filename

285034