DocumentCode
1083329
Title
High-voltage silicon thin film transistor on quartz
Author
Unagami, T. ; Tsujiyama, B.
Author_Institution
Nippon Telegraph and Telephone Public Corporation, Ibaraki-Ken, Japan
Volume
3
Issue
6
fYear
1982
fDate
6/1/1982 12:00:00 AM
Firstpage
167
Lastpage
168
Abstract
A high voltage enhancement-type thin film transistor (TFT) has been fabricated on quartz in layers of laser-recrystallized polysilicon. The fabrication details and TFT characteristics are described.
Keywords
Amorphous silicon; Annealing; Flat panel displays; Grain size; Liquid crystal displays; Optical device fabrication; Power lasers; Semiconductor materials; Substrates; Thin film transistors;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25524
Filename
1482629
Link To Document