Title :
High-voltage silicon thin film transistor on quartz
Author :
Unagami, T. ; Tsujiyama, B.
Author_Institution :
Nippon Telegraph and Telephone Public Corporation, Ibaraki-Ken, Japan
fDate :
6/1/1982 12:00:00 AM
Abstract :
A high voltage enhancement-type thin film transistor (TFT) has been fabricated on quartz in layers of laser-recrystallized polysilicon. The fabrication details and TFT characteristics are described.
Keywords :
Amorphous silicon; Annealing; Flat panel displays; Grain size; Liquid crystal displays; Optical device fabrication; Power lasers; Semiconductor materials; Substrates; Thin film transistors;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25524
