Physical Description of Quasi-Saturation and Impact-Ionization Effects in High-Voltage Drain-Extended MOSFETs

Author

Wang, Lei ; Wang, Jun ; Gao, Chao ; Hu, Jian ; Li, Paul ; Li, Wenjun ; Yang, Steve H Y

Volume

56

Issue

3

fYear

2009

fDate

3/1/2009 12:00:00 AM

Firstpage

492

Lastpage

498

Abstract

This paper presents a physical description of two specific aspects in drain-extended MOS transistors, i.e., quasi-saturation and impact-ionization effects. The 2-D device simulator Medici provides the physical insights, and both the unique features are originally attributed to the Kirk effect. The transistor dc model is derived from regional analysis of carrier transport in the intrinsic MOS and the drift region. The substrate-current equations, considering extra impact-ionization factors in the drift region, are also rigorously derived. The proposed model is primarily validated by MATLAB program and exhibits excellent scalability for various transistor dimensions, drift-region doping concentration, and voltage-handling capability.

Keywords

MOSFET; doping profiles; impact ionisation; mathematics computing; semiconductor device models; semiconductor doping; 2D device simulator Medici; DEMOS; Kirk effect; MATLAB program; MOS transistor; carrier transport; doping concentration; drift region; high-voltage drain-extended MOSFET; impact-ionization effect; intrinsic MOS; quasisaturation; scalability; substrate-current equations; transistor dc model; voltage-handling capability; Doping; Equations; Kirk field collapse effect; MATLAB; MOSFETs; Mathematical model; Medical simulation; Scalability; Semiconductor process modeling; Voltage; Drain-extended MOS (DEMOS); Kirk effect; impact ionization; quasi-saturation;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2008.2011575

Filename

4760258