MoSi2formation by rapid isothermal annealing

Formation of MoSi2by rapid isothermal annealing has been investigated using black-body radiation from a graphite heater. Although elemental Mo layers deposited on 3 in diameter silicon wafers failed to form silicides after annealing, excellent results were obtained using co-sputtered Mo and Si on similar substrates. It was found that regrowth began within the first few seconds at 900-1000°C, and a 20 sec anneal time at 1000°C reduces sheet resistivity by one order of magnitude from as-deposited values. This method of annealing might thus offer a practical solution to low-resistivity silicide formation in very large-scale integrated-circuit devices, without the significant dopant redistribution observed in furnace annealing.