DocumentCode :
1083400
Title :
Models of dependence of controllable current on number of islands in gate turn-off thyristors
Author :
Gribnikov, Zinovi ; Melnikova, Yuliya ; Rokhlenko, Alexander ; Rothwarf, Allen ; Mehta, Harshad
Author_Institution :
Inst. of Semicond., Acad. of Sci., Kiev, Ukraine
Volume :
41
Issue :
5
fYear :
1994
fDate :
5/1/1994 12:00:00 AM
Firstpage :
836
Lastpage :
842
Abstract :
The maximum controllable on-state current, IM, of a multi-island GTO, is calculated as a function of the number of islands. The limit considered is based upon the premise that if the instantaneous current through the cathode of an island exceeds a critical value ic, then that island, and hence the GTO, will not turn off. Our approach is based upon the observed variation in the storage times of individual islands after the initiation of the gate turn-off current. The distribution of storage times is treated as a distribution of random numbers. Both a homogeneous and a Gaussian distribution are treated. The functional form in time of the fall in current through an island, after the storage time was also found to be important. If an island shuts off within a time short compared to the spread in storage times, then IM will be small and not scale with the number of islands N. The conditions under which IM~N might be obtained are discussed
Keywords :
electric current; equivalent circuits; semiconductor device models; thyristors; Gaussian distribution; controllable current dependence; gate turnoff current; gate turnoff thyristors; homogeneous distribution; models; multi-island GTO; storage times; Cathodes; Critical current; Fingers; Gaussian distribution; Helium; Integrated circuit modeling; Proportional control; Strips; Thyristors; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.285039
Filename :
285039
Link To Document :
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