Title :
Carrier transit time through a base with dopant dependent mobility
Author :
Rosenfeld, David ; Alterovitz, Samuel A.
Author_Institution :
Fac. of Electr. Eng., Technion-Israel Inst. of Technol., Haifa, Israel
fDate :
5/1/1994 12:00:00 AM
Abstract :
The transit time through a base with exponential grading of dopant density is modeled and calculated. The dependence of the mobility on dopant concentration (and hence the spatial dependence) is taken into account and an analytical solution is derived
Keywords :
bipolar transistors; carrier mobility; impurity distribution; semiconductor device models; analytical solution; bipolar transistors; carrier transit time; dopant concentration; dopant dependent mobility; exponential grading; spatial dependence; Aluminum; Bipolar transistors; Doping profiles; Frequency estimation; Gallium arsenide; Germanium silicon alloys; Heterojunction bipolar transistors; Indium; Semiconductor process modeling; Silicon germanium;
Journal_Title :
Electron Devices, IEEE Transactions on
