DocumentCode
1083434
Title
Superior damage-immunity of thin oxides thermally grown on reactive-ion-etched silicon surface in N2O ambient
Author
Ueng, S.Y. ; Chao, T.S. ; Wang, P.J. ; Chen, W.H. ; Chang, D.C. ; Cheng, H.C.
Author_Institution
Dept. of Electron. Eng., Nat. Chiao Tung Univ., Hsinchu, Taiwan
Volume
41
Issue
5
fYear
1994
fDate
5/1/1994 12:00:00 AM
Firstpage
850
Lastpage
851
Abstract
Thin oxides thermally grown on reactive-ion-etched silicon surfaces in N2O ambient have been studied. As compared with pure oxides grown on the etched silicon in dry oxygen, N2O-grown oxides exhibit significantly stronger immunity to the RIE-induced damages. A great improvement in both time-zero-dielectric-breakdown (TZDB) and time-dependent-breakdown (TDDB) characteristics is observed for the N2O-grown oxides on RIE-treated silicon surfaces. Accelerated tests have shown that the N 2O oxide grown on the RIE silicon surface can achieve a lifetime longer than the pure oxide grown on the correspondingly etched silicon surface with a factor over 108
Keywords
electric breakdown of solids; life testing; oxidation; sputter etching; N2O; N2O ambient; RIE-induced damage; Si; accelerated tests; damage immunity; dry etching; lifetime; reactive-ion-etch surface; thin thermal oxides; time dependent breakdown; time zero dielectric breakdown; Annealing; Chaos; Contamination; Current density; Degradation; Dielectrics; Dry etching; Laboratories; Oxidation; Silicon;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.285043
Filename
285043
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