GaAs MESFET´s with partial p-type drain regions

The use of a localized p-type region in the drain of a GaAs MESFET has been studied. Holes injected from this p-region compensate the negative space charge region at the channel-substrate interface, minimizing undesirable substrate effects. The MESFET´s fabricated with p-type drain regions (called p-FET´s) exhibited I-V characteristics with less hysteresis and low light sensitivity compared to standard n-type drain MESFET´s. Also, less backgating effect has been observed in these p-FET´s than in standard MESFET´s.