• DocumentCode
    1083456
  • Title

    Accumulation-punchthrough mode of operation of buried-channel MOSFET´s

  • Author

    Ratnam, P. ; Bhattacharyya, A.B.

  • Author_Institution
    Indian Institute of Technology, New Delhi, India
  • Volume
    3
  • Issue
    7
  • fYear
    1982
  • fDate
    7/1/1982 12:00:00 AM
  • Firstpage
    203
  • Lastpage
    204
  • Abstract
    The current-voltage characteristics of a buried-channel MOSFET operated in a "punchthrough-accumulation" mode, when the neutral implanted channel is completely depleted due to punchthrough by substrate bias and an accumulation layer is induced by the gate, are demonstrated. It is shown that the value of one of the device model parameters, φMS, used under the above mode of operation corresponds to the gate and the substrate rather than to the gate and the channel.
  • Keywords
    Channel bank filters; Current-voltage characteristics; Degradation; Equations; Large scale integration; MOSFET circuits; P-n junctions; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25538
  • Filename
    1482643
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083456