Title :
Fabrication of strain-controlled SiGe/Ge MODFET with ultrahigh hole mobility
Author :
Murakami, E. ; Nakagawa, K. ; Nishida, A. ; Miyao, M.
Author_Institution :
Central Res. Lab., Hitachi Ltd, Tokyo, Japan
fDate :
5/1/1994 12:00:00 AM
Abstract :
The fabrication and characterization of a strain-controlled SiGe/Ge MODFET is described in detail. The heterostructure consisting of p-Si0.5Ge0.5/Ge/Si1-xsGexs was grown by molecular beam epitaxy, and to enlarge the valence-band discontinuity, the strain in the p-Si0.5Ge0.5/Ge layers was controlled by changing the composition of the relaxed Si1-xsGexs layer. A maximum hole mobility of about 9000 cm2/Vs was obtained at temperatures near 77 K. Some remaining problems, that muse be solved in order to make high performance MODFET´s operating at room temperature, are also discussed
Keywords :
Ge-Si alloys; carrier mobility; elemental semiconductors; germanium; high electron mobility transistors; leakage currents; molecular beam epitaxial growth; semiconductor growth; semiconductor materials; 77 K; MBE growth; Si0.5Ge0.5-Ge; characterization; fabrication; heterostructure; low temperature operation; molecular beam epitaxy; p-Si0.5Ge0.5/Ge/Si1-xsGexs ; strain-controlled SiGe/Ge MODFET; ultrahigh hole mobility; valence-band discontinuity; Capacitive sensors; Fabrication; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; MODFETs; MOSFET circuits; Silicon germanium; Tellurium; Temperature;
Journal_Title :
Electron Devices, IEEE Transactions on
