Fabrication of strain-controlled SiGe/Ge MODFET with ultrahigh hole mobility

Author

Murakami, E. ; Nakagawa, K. ; Nishida, A. ; Miyao, M.

Author_Institution

Central Res. Lab., Hitachi Ltd, Tokyo, Japan

Volume

41

Issue

5

fYear

1994

fDate

5/1/1994 12:00:00 AM

Firstpage

857

Lastpage

861

Abstract

The fabrication and characterization of a strain-controlled SiGe/Ge MODFET is described in detail. The heterostructure consisting of p-Si_0.5Ge_0.5/Ge/Si_1-xsGe_xs was grown by molecular beam epitaxy, and to enlarge the valence-band discontinuity, the strain in the p-Si_0.5Ge_0.5/Ge layers was controlled by changing the composition of the relaxed Si_1-xsGe_xs layer. A maximum hole mobility of about 9000 cm²/Vs was obtained at temperatures near 77 K. Some remaining problems, that muse be solved in order to make high performance MODFET´s operating at room temperature, are also discussed

Keywords

Ge-Si alloys; carrier mobility; elemental semiconductors; germanium; high electron mobility transistors; leakage currents; molecular beam epitaxial growth; semiconductor growth; semiconductor materials; 77 K; MBE growth; Si_0.5Ge_0.5-Ge; characterization; fabrication; heterostructure; low temperature operation; molecular beam epitaxy; p-Si_0.5Ge_0.5/Ge/Si_1-xsGe_xs; strain-controlled SiGe/Ge MODFET; ultrahigh hole mobility; valence-band discontinuity; Capacitive sensors; Fabrication; Germanium silicon alloys; HEMTs; Heterojunction bipolar transistors; MODFETs; MOSFET circuits; Silicon germanium; Tellurium; Temperature;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.285046

Filename

285046