Title :
A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
Author :
de Vreede, L.C.N. ; Dambrine, A.C. ; Tauritz, J.L. ; Baets, R.G.F.
Author_Institution :
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
fDate :
4/1/1994 12:00:00 AM
Abstract :
In this paper, the design and realization of an integrated high frequency AGC amplifier in BiCMOS technology are discussed. The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. The amplifier is suitable for application in wide-band optical telecommunication systems
Keywords :
BiCMOS integrated circuits; MMIC; automatic gain control; elemental semiconductors; linear integrated circuits; microwave amplifiers; silicon; wideband amplifiers; 3 dB bandwidth; 36 dB; 4 GHz; BiCMOS technology; MMICs; Si; dynamic range; high gain silicon AGC amplifier; power consumption; spectral distortion; voltage gain; wide-band optical telecommunication systems; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Dynamic range; Frequency; Gain; Optical amplifiers; Optical distortion; Silicon; Voltage;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
