DocumentCode
1083529
Title
A high gain silicon AGC amplifier with a 3 dB bandwidth of 4 GHz
Author
de Vreede, L.C.N. ; Dambrine, A.C. ; Tauritz, J.L. ; Baets, R.G.F.
Author_Institution
Dept. of Electr. Eng., Delft Univ. of Technol., Netherlands
Volume
42
Issue
4
fYear
1994
fDate
4/1/1994 12:00:00 AM
Firstpage
546
Lastpage
552
Abstract
In this paper, the design and realization of an integrated high frequency AGC amplifier in BiCMOS technology are discussed. The amplifier has 36 dB voltage gain, 4 GHz bandwidth, dynamic range exceeding 50 dB, low spectral distortion and low power consumption. The amplifier is suitable for application in wide-band optical telecommunication systems
Keywords
BiCMOS integrated circuits; MMIC; automatic gain control; elemental semiconductors; linear integrated circuits; microwave amplifiers; silicon; wideband amplifiers; 3 dB bandwidth; 36 dB; 4 GHz; BiCMOS technology; MMICs; Si; dynamic range; high gain silicon AGC amplifier; power consumption; spectral distortion; voltage gain; wide-band optical telecommunication systems; Bandwidth; BiCMOS integrated circuits; Broadband amplifiers; Dynamic range; Frequency; Gain; Optical amplifiers; Optical distortion; Silicon; Voltage;
fLanguage
English
Journal_Title
Microwave Theory and Techniques, IEEE Transactions on
Publisher
ieee
ISSN
0018-9480
Type
jour
DOI
10.1109/22.285058
Filename
285058
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