Title :
Stacked MOSFET´s in a single film of laser-recrystallized PolySilicon
Author :
Gibbons, J.F. ; Lee, K.F. ; Wu, F.C. ; Eggermont, G.E.J.
Author_Institution :
Stanford Electronics Laboratories, Stanford, CA
fDate :
8/1/1982 12:00:00 AM
Abstract :
The feasibility of building stacked MOSFET´s in a single laser recrystallized polysilicon film is demonstrated. Devices fabricated in this initial study use separate gates to obtain independent enhancement mode behavior on each surface of the recrystallized film. The transistors worked simultaneously and inverter action was demonstrated using a CMOS configuration.
Keywords :
CMOS technology; Decoding; Inverters; Laboratories; Laser modes; Liquid crystal displays; MOSFETs; Semiconductor films; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25547
