Title :
Modulation-doped AlGaAs/GaAs heterostructure charge coupled devices
Author :
Milano, R.A. ; Cohen, M.J. ; Miller, D.L.
Author_Institution :
Rockwell International, Thousand Oaks, CA, USA
fDate :
8/1/1982 12:00:00 AM
Abstract :
The advantages of the modulation-doped heterostructure over conventional materials structures for high speed CCD applications are outlined. In addition, the first demonstration of charge transfer in a modulation-doped AlGaAs/GaAs heterojunction is reported. A ten cell, three phase Schottky barrier gate CCD was fabricated using this structure and operated as a shift register. The details of the device fabrication and characterization are presented.
Keywords :
Charge coupled devices; Charge transfer; Charge-coupled image sensors; Dynamic range; Electrons; Epitaxial layers; Fabrication; Gallium arsenide; MESFETs; Schottky barriers;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25548
