• DocumentCode
    1083578
  • Title

    A GaAs monolithic frequency divider using source coupled FET Logic

  • Author

    Katsu, S. ; Nambu, S. ; Shimano, S. ; Kano, G.

  • Author_Institution
    Matsushita Electronics Corporation, Osaka, Japan
  • Volume
    3
  • Issue
    8
  • fYear
    1982
  • fDate
    8/1/1982 12:00:00 AM
  • Firstpage
    197
  • Lastpage
    199
  • Abstract
    A GaAs monolithic binary frequency divider based on the new source coupled FET logic (SCFL) is reported. A very wide range for the threshold voltage in the constituent FET´s is allowable because in principle the SCFL operates in a current mode. A single-clocked SCFL master-slave frequency divider was successfully fabricated with 1µm-gate MESFET´s with a threshold voltage ranging from -0.7 V to +0.2 V. The highest operating frequency was 2.5 GHz at the power consumption of 25 mW.
  • Keywords
    Circuits; Differential amplifiers; Energy consumption; FETs; Frequency conversion; Gallium arsenide; Inverters; Logic; MESFETs; Threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25549
  • Filename
    1482654