Characterization of RF-MOSFETs in Common-Source Configuration at Different Source-to-Bulk Voltages From S-Parameters

Author

Zarate-Rincon, Fabian ; Alvarez-Botero, German A. ; Torres-Torres, R. ; Murphy-Arteaga, Roberto S. ; Decoutere, Stefaan

Author_Institution

Dept. of Electron., Inst. Nac. de Astrofis., Opt. y Electron., Puebla, Mexico

Volume

60

Issue

8

fYear

2013

fDate

Aug. 2013

Firstpage

2450

Lastpage

2456

Abstract

Using a new test fixture that allows us to bias the bulk terminal through an additional compensated DC probe, a two-port S-measurement-based methodology to characterize RF-MOSFETs in common-source configuration is herein presented. In addition to obtaining S-parameters at different bulk-to-source voltages using a single two-port configured test-fixture, the proposal allows the analysis of the electrical parameters of a MOSFET that are influenced by the substrate effect when the frequency rises. Physically expected results are obtained for device´s model parameters, allowing to accurately reproduce S-parameters up to 20 GHz. Furthermore, extracted parameters, such as threshold voltage, are in agreement with those obtained using well-established DC methods. This method allows one to characterize a four-terminal MOSFET from two-port small-signal measurements.

Keywords

MOSFET; S-parameters; microwave field effect transistors; microwave measurement; semiconductor device measurement; semiconductor device models; semiconductor device testing; RF-MOSFET characterization; S-parameters; common-source configuration; compensated DC probe; single two-port configured test-fixture; source-to-bulk voltages; two-port S-measurement-based methodology; two-port small-signal measurements; DC methods; RF-MOSFET; physical parameters of MOSFET; two-port S-parameter measurements;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/TED.2013.2264724

Filename

6541975