Title :
Short channel Ga0.47In0.53As/Al0.48In0.52As selectively doped field effect transistors
Author :
Chen, C.Y. ; Cho, A.Y. ; Alavi, K. ; Garbinski, P.A.
Author_Institution :
Bell Laboratories, Murray Hill, New Jersey
fDate :
8/1/1982 12:00:00 AM
Abstract :
We report a selectively doped Ga0.47In0.53As/Al0.48In0.52As field effect transistor with a 1.2 µm gate length and present a model of two-region operation to analyze its I-V characteristics. This depletion mode transistor shows complete pinch-off and saturation characteristics with a low frequency transconductance of 70 mmho/ mm at 300 K and 125 mmho/mm at 77 K. The theoretical model, which includes the background carriers in the undoped Ga0.47In0.52As layer, agrees with the experimental results.
Keywords :
Contact resistance; Electrical resistance measurement; Etching; FETs; Frequency; Hall effect; Indium phosphide; Optical fiber devices; Silicon compounds; Transconductance;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25552
