Title :
Manufacturing tolerance of capacitor coupled GaAs FET logic circuits
Author :
Livingstone, A.W. ; Welbourn, A.D. ; Blau, G.L.
Author_Institution :
British Telecommunications Research Laboratories, Suffolk, England
fDate :
10/1/1982 12:00:00 AM
Abstract :
Interstage coupling of depletion mode GaAs digital circuits by means of capacitors has been proposed as a simply fabricated technique combining both low power and process tolerance. This is now substantiated by results of ring-oscillators and dividers, operating at up to 1 GHz, on wafers over which the FET pinch-off voltages vary between -0.5 V and -4.0 V.
Keywords :
Capacitance; Capacitors; Coupling circuits; FETs; Gallium arsenide; Inverters; Logic circuits; Manufacturing; Schottky diodes; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25570