DocumentCode :
1083840
Title :
A direct measurement of interfacial contact resistance
Author :
Proctor, S.J. ; Linholm, L.W.
Author_Institution :
National Bureau of Standards, Washington, DC
Volume :
3
Issue :
10
fYear :
1982
fDate :
10/1/1982 12:00:00 AM
Firstpage :
294
Lastpage :
296
Abstract :
A method is described for directly measuring interfacial contact resistance and estimating the degree of uniformity of the interfacial layer in metal-semiconductor contacts. A two-dimensional resistor network model is used to obtain a relationship between the specific contact resistance and the measured interfacial contact resistance for contacts with a homogeneous interfacial layer. Measurement results are given for 98.5% Al/1.5% Si and 100 % Al contacts on n-type silicon.
Keywords :
Circuit testing; Conductors; Contact resistance; Current measurement; Electrical resistance measurement; Integrated circuit measurements; Integrated circuit reliability; Probes; Semiconductor devices; Voltage;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/EDL.1982.25574
Filename :
1482679
Link To Document :
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