Title :
Advanced CD Control Technology for 65-nm Node Dual Damascene Process
Author :
Nagase, Masatoshi ; Maruyama, Takuya ; Sekine, Makoto
Author_Institution :
NEC Electron. Corp., Kanagawa
Abstract :
This paper describes an advanced critical dimension (CD) control technology for a 65-nm node dual damascene process and beyond. A newly developed deposition enhanced shrink etching (DESE) process was introduced into both via and trench etching. This technology realizes not only dynamic via shrink ranging 40 nm but also accurate trench CD control by feedforward technology. Etching performance was investigated by electrical results of 65-nm Cu/low-k interconnects using porous chemical-vapor deposition SiOC. The 100% yields of 60-M via chains verified the DESE process robustness.
Keywords :
coating techniques; dielectric materials; etching; integrated circuit interconnections; process control; Cu - Element; SiOC - System; advanced critical dimension control technology; deposition enhanced shrink etching process; dual damascene process; low-k interconnects; porous chemical-vapor deposition; size 40 nm; size 65 nm; trench etching; CMOS technology; Chemical technology; Costs; Dielectric materials; Etching; Integrated circuit interconnections; Lithography; Resists; Robustness; Semiconductor devices; Critical dimension (CD); dual damascene; etching; feedforward technology; low-k; shrink technology;
Journal_Title :
Semiconductor Manufacturing, IEEE Transactions on
DOI :
10.1109/TSM.2007.901842
