• DocumentCode
    1083918
  • Title

    A high-voltage Zener diode with an array structure

  • Author

    Edwards, D.G. ; Grossman, W.D.

  • Author_Institution
    Siemens Corp., Princeton, NJ
  • Volume
    3
  • Issue
    10
  • fYear
    1982
  • fDate
    10/1/1982 12:00:00 AM
  • Firstpage
    312
  • Lastpage
    314
  • Abstract
    A design for a high-voltage Zener diode which employs a technology similar to that used for power MOS transistors is presented. Device performance is improved by patterning the device anode to create an array of small p+regions which are connected in parallel to form a composite Zener diode. Results from fabricated devices have verified that the design concept is valid for devices in the voltage range above 400 V, and have provided information on the optimum device geometry.
  • Keywords
    Anodes; Breakdown voltage; Diodes; Doping; Electric breakdown; Epitaxial layers; Information geometry; Joining processes; MOSFETs; Temperature;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25581
  • Filename
    1482686
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1083918