Title :
A high-voltage Zener diode with an array structure
Author :
Edwards, D.G. ; Grossman, W.D.
Author_Institution :
Siemens Corp., Princeton, NJ
fDate :
10/1/1982 12:00:00 AM
Abstract :
A design for a high-voltage Zener diode which employs a technology similar to that used for power MOS transistors is presented. Device performance is improved by patterning the device anode to create an array of small p+regions which are connected in parallel to form a composite Zener diode. Results from fabricated devices have verified that the design concept is valid for devices in the voltage range above 400 V, and have provided information on the optimum device geometry.
Keywords :
Anodes; Breakdown voltage; Diodes; Doping; Electric breakdown; Epitaxial layers; Information geometry; Joining processes; MOSFETs; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25581
