Title :
Preparation and properties of molecular beam epitaxy grown (Al0.5Ga0.5)0.48In0.52As
Author :
Barnard, J.A. ; Wood, C.E.C. ; Eastman, L.F.
Author_Institution :
Cornell University, Ithaca, New York
fDate :
10/1/1982 12:00:00 AM
Abstract :
The first reported growth of the quaternary AlGaInAs on an InP substrate by molecular beam epitaxy had an equal aluminum-to-gallium mole fraction ratio, and exhibited a 5 K bandgap energy of 1.237 eV. This is intermediate between the 5 K band gap energy of Ga0.47In0.53As (0.810 eV) and that of Al0.48In0.52As (1.56 eV). A Schottky diode and a MESFET were fabricated on this material.
Keywords :
Absorption; Fiber lasers; Indium phosphide; Laser modes; Molecular beam epitaxial growth; Optical materials; Photonic band gap; Substrates; Surface emitting lasers; Temperature;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25583
