DocumentCode
1083963
Title
Buried channel MOSFET´s with gate lengths from 2.5 µm to 700 Å
Author
Howard, R.E. ; Jackel, L.D. ; Swartz, R.G. ; Grabbe, P. ; Archer, V.D. ; Epworth, R.W. ; Hu, E.L. ; Tennant, D.M. ; Voshchenkov, A.M.
Author_Institution
Bell Laboratories, Holmdel, NJ
Volume
3
Issue
10
fYear
1982
fDate
10/1/1982 12:00:00 AM
Firstpage
322
Lastpage
324
Abstract
High resolution electron beam lithography has been used to fabricate ion implanted buried channel MOSFET´s with gate lengths ranging from 0.4 µm to 700 Å. Similar devices were also fabricated on the same chip using optical lithography with gate lengths of 2.5 µm. These devices include some with the smallest lithographically defined gates ever made in silicon; similar devices should help define the limits to miniaturization in semiconducting devices.
Keywords
Etching; Gold; Lithography; Metallization; Plasma applications; Plasma devices; Plasma immersion ion implantation; Plasma sources; Silicon; Substrates;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25585
Filename
1482690
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