Buried channel MOSFET´s with gate lengths from 2.5 µm to 700 Å

High resolution electron beam lithography has been used to fabricate ion implanted buried channel MOSFET´s with gate lengths ranging from 0.4 µm to 700 Å. Similar devices were also fabricated on the same chip using optical lithography with gate lengths of 2.5 µm. These devices include some with the smallest lithographically defined gates ever made in silicon; similar devices should help define the limits to miniaturization in semiconducting devices.