Title :
An improved method to determine MOSFET channel length
Author :
Peng, K.-L. ; Afromowitz, M.A.
Author_Institution :
University of Washington, Seattle, WA
fDate :
12/1/1982 12:00:00 AM
Abstract :
An accurate and simple method to determine channel length and parasitic drain/source series resistance is presented. This method is based on measured data of two identical devices with different channel lengths. Because of its simplicity, the technique is suitable for use in automatic parameter testing systems.
Keywords :
Capacitance; Current measurement; Electrical resistance measurement; Intrusion detection; Length measurement; MOS devices; MOSFET circuits; Surface resistance; Threshold voltage; Velocity measurement;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25600
