DocumentCode
1084119
Title
An improved method to determine MOSFET channel length
Author
Peng, K.-L. ; Afromowitz, M.A.
Author_Institution
University of Washington, Seattle, WA
Volume
3
Issue
12
fYear
1982
fDate
12/1/1982 12:00:00 AM
Firstpage
360
Lastpage
362
Abstract
An accurate and simple method to determine channel length and parasitic drain/source series resistance is presented. This method is based on measured data of two identical devices with different channel lengths. Because of its simplicity, the technique is suitable for use in automatic parameter testing systems.
Keywords
Capacitance; Current measurement; Electrical resistance measurement; Intrusion detection; Length measurement; MOS devices; MOSFET circuits; Surface resistance; Threshold voltage; Velocity measurement;
fLanguage
English
Journal_Title
Electron Device Letters, IEEE
Publisher
ieee
ISSN
0741-3106
Type
jour
DOI
10.1109/EDL.1982.25600
Filename
1482705
Link To Document