Title :
Ion-implanted In0.53Ga0.47As/In0.52Al0.48As lateral PNP transistors
Author :
Tabatabaie-Alavi, K. ; Choudhury, A.N.M.M. ; Alavi, K. ; Vlcek, J. ; Slater, N.J. ; Fonstad, C.G. ; Cho, A.Y.
Author_Institution :
Massachusetts Institute of Technology, Cambridge, MA
fDate :
12/1/1982 12:00:00 AM
Abstract :
Lateral PNP transistors have been realized for the first time in the (In,Ga)As/(In,Al)As heterostructure material system. Be ion implantation has been used to form the emitter and collector junctions. A current gain of 3.8 is obtained up to 200 µA of collector current for devices with a 1.5 µm electrical base width. A hole diffusion length of 2 µm in the (In,Ga)As is estimated.
Keywords :
Delay; Gallium arsenide; Heterojunctions; Indium phosphide; Ion implantation; Logic circuits; Logic devices; Photonic band gap; Substrates; Very high speed integrated circuits;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25606
