• DocumentCode
    1084204
  • Title

    The bloch-FET—A lateral surface superlattice device

  • Author

    Reich, R.K. ; Grondin, R.O. ; Ferry, D.K. ; Iafrate, G.J.

  • Author_Institution
    Colorado State University, Ft. Collins, CO
  • Volume
    3
  • Issue
    12
  • fYear
    1982
  • fDate
    12/1/1982 12:00:00 AM
  • Firstpage
    381
  • Lastpage
    383
  • Abstract
    We describe a lateral surface superlattice device embedded in a MOSFET structure. Control of the inversion layer density and the two-dimensional quantized inversion layer itself allows optimizing the sub-band energy level spacing for a variety of applications. In particular, the narrow bands that arise in the inversion layer itself lead to the possibility of readily achieving negative differential conductivity in the transport properties of electrons through the device.
  • Keywords
    Conductivity; Effective mass; Electrons; Energy states; Lattices; MOSFET circuits; Metallization; Narrowband; Physics; Semiconductor superlattices;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25607
  • Filename
    1482712
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084204