• DocumentCode
    1084213
  • Title

    Blister formation in Pd gate MIS hydrogen sensors

  • Author

    Armgarth, M. ; Nylander, C.

  • Author_Institution
    Linköping Institute of Technology, Linköping, Sweden
  • Volume
    3
  • Issue
    12
  • fYear
    1982
  • fDate
    12/1/1982 12:00:00 AM
  • Firstpage
    384
  • Lastpage
    386
  • Abstract
    Blister formation in palladium gate metal-insulator-semiconductor hydrogen sensors occurs even at low hydrogen pressures and leads to erroneous measurements. The metal defects are due to hydrogen induced stresses in the palladium film. Being aware of this problem, the degradation can be avoided.
  • Keywords
    Capacitance; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Feedback circuits; Hydrogen; Metal-insulator structures; Monitoring; Palladium; Voltage;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25608
  • Filename
    1482713
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084213