Title :
Blister formation in Pd gate MIS hydrogen sensors
Author :
Armgarth, M. ; Nylander, C.
Author_Institution :
Linköping Institute of Technology, Linköping, Sweden
fDate :
12/1/1982 12:00:00 AM
Abstract :
Blister formation in palladium gate metal-insulator-semiconductor hydrogen sensors occurs even at low hydrogen pressures and leads to erroneous measurements. The metal defects are due to hydrogen induced stresses in the palladium film. Being aware of this problem, the degradation can be avoided.
Keywords :
Capacitance; Capacitance-voltage characteristics; Capacitors; Channel bank filters; Feedback circuits; Hydrogen; Metal-insulator structures; Monitoring; Palladium; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25608
