Title :
Performance comparison of heterojunction phototransistors, p-i-n FET´s, and APD-FET´s for optical fiber communication systems
Author :
Tabatabaie-Alavi, K. ; Fonstad, C.G., Jr.
Author_Institution :
Dept. of Electrical Engrg. and Computer Science, Center for Materials Science and Engrg., Massachusetts Institute of Techno., Cambridge, MA, USA
fDate :
12/1/1981 12:00:00 AM
Abstract :
An analysis of the sensitivity of InGaAs/InP bipolar heterojunction phototransistors (HJPTs) used in pulse code modulated optical communication systems is presented. The minimum detectable power of an HJPT biased at the optimum level is found to increase linearly with bit rate B while because of the fixed transconductance of the FET amplifier, the minimum detectable power of a p-i-n FET increases as B3/2. It is shown that HJPTs can thus have higher sensitivity than p-i-n FET detectors, particularly at high bit rates, and can have comparable sensitivity to ADP-FET detectors.
Keywords :
III-V semiconductors; avalanche photodiodes; field effect transistors; gallium arsenide; indium compounds; optical communication equipment; phototransistors; ADP-FET; FET amplifier; III-V semiconductors; InGaAs/InP bipolar heterojunction phototransistors; bit rate; heterojunction phototransistors; minimum detectable power; optical fiber communication systems; p-i-n FETs; pulse code modulated optical communication systems; sensitivity; transconductance; Bit rate; FETs; Heterojunctions; Indium gallium arsenide; Indium phosphide; Optical fiber communication; PIN photodiodes; Phototransistors; Pulse amplifiers; Pulse modulation;
Journal_Title :
Quantum Electronics, IEEE Journal of
DOI :
10.1109/JQE.1981.1070738
