Title :
Quarter micron low noise GaAs FET´s
Author :
Chye, P.W. ; Huang, C.
Author_Institution :
Avantek, Inc., Santa Clara, CA
fDate :
12/1/1982 12:00:00 AM
Abstract :
New quarter-micron gate GaAs MESFET´s fabricated with optical lithography have yielded the best noise figures ever reported for FET´s at frequencies between 12 and 32 GHz.
Keywords :
Bonding; FETs; Frequency; Gallium arsenide; Gold; Lithography; MESFETs; Microstrip; Noise figure; Optical noise;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/EDL.1982.25614
