• DocumentCode
    1084275
  • Title

    Quarter micron low noise GaAs FET´s

  • Author

    Chye, P.W. ; Huang, C.

  • Author_Institution
    Avantek, Inc., Santa Clara, CA
  • Volume
    3
  • Issue
    12
  • fYear
    1982
  • fDate
    12/1/1982 12:00:00 AM
  • Firstpage
    401
  • Lastpage
    403
  • Abstract
    New quarter-micron gate GaAs MESFET´s fabricated with optical lithography have yielded the best noise figures ever reported for FET´s at frequencies between 12 and 32 GHz.
  • Keywords
    Bonding; FETs; Frequency; Gallium arsenide; Gold; Lithography; MESFETs; Microstrip; Noise figure; Optical noise;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25614
  • Filename
    1482719
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084275