• DocumentCode
    1084292
  • Title

    Semiconductor structures for repeated velocity overshoot

  • Author

    Cooper, J.A. ; Capasso, F. ; Thornber, K.K.

  • Author_Institution
    Bell Laboratories, Murray Hill, NJ
  • Volume
    3
  • Issue
    12
  • fYear
    1982
  • fDate
    12/1/1982 12:00:00 AM
  • Firstpage
    407
  • Lastpage
    408
  • Abstract
    We discuss conditions necessary for obtaining repeated velocity overshoot in semiconductors. Two classes of structures which provide these conditions are considered. These structures offer the potential for achieving average drift velocities well in excess of the maximum steady-state velocity over distances ranging from submicron to tens of microns.
  • Keywords
    Conductors; Electron beams; Electron mobility; Electron optics; Gallium arsenide; Molecular beam epitaxial growth; Optical scattering; Phonons; Satellites; Steady-state;
  • fLanguage
    English
  • Journal_Title
    Electron Device Letters, IEEE
  • Publisher
    ieee
  • ISSN
    0741-3106
  • Type

    jour

  • DOI
    10.1109/EDL.1982.25616
  • Filename
    1482721
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084292