Temperature-Dependent Characterization of AlGaN/GaN HEMTs: Thermal and Source/Drain Resistances

Author

Menozzi, Roberto ; Umana-Membreno, Gilberto A. ; Nener, Brett D. ; Parish, Giacinta ; Sozzi, Giovanna ; Faraone, Lorenzo ; Mishra, Umesh K.

Author_Institution

Dept. of Inf. Technol., Univ. of Parma, Parma

Volume

8

Issue

2

fYear

2008

fDate

6/1/2008 12:00:00 AM

Firstpage

255

Lastpage

264

Abstract

This paper shows the application of simple dc techniques to the temperature-dependent characterization of AlGaN/ GaN HEMTs in terms of the following: 1) thermal resistance and 2) ohmic series resistance (at low drain bias). Despite their simplicity, these measurement techniques are shown to give valuable information about the device behavior over a wide range of ambient/channel temperatures. The experimental results are validated by comparison with independent measurements and numerical simulations.

Keywords

III-V semiconductors; aluminium compounds; gallium compounds; high electron mobility transistors; thermal resistance; AlGaN-GaN; GaN-based HEMT; ohmic series resistance; source-drain resistance; thermal resistance; Gallium compounds; III nitrides; III–V semiconductors; III-V semiconductors; III-nitrides; MODFETs; microwave power transistors; power HEMTs; semiconductor device measurements; semiconductor device thermal factors; semiconductor-device measurements; semiconductor-device thermal factors; wide bandgap semiconductors;

fLanguage

English

Journal_Title

Device and Materials Reliability, IEEE Transactions on

Publisher

ieee

ISSN

1530-4388

Type

jour

DOI

10.1109/TDMR.2008.918960

Filename

4459069