A Novel Vector Hydrophone Based on the Piezoresistive Effect of Resonant Tunneling Diode

Author

Xue, Chenyang ; Tong, Zhaomin ; Zhang, Binzhen ; Zhang, Wendong

Author_Institution

North Univ. of China, Taiyuan

Volume

8

Issue

4

fYear

2008

fDate

4/1/2008 12:00:00 AM

Firstpage

401

Lastpage

402

Abstract

This letter reports a novel vector hydrophone based on the piezoresistive effect of resonant tunneling diode (RTD). An external pressure introduces stress in the layers of RTD and induces its current-voltage (I-V) curves change. This effect has been applied to designing new sensor. By control-hole technology, the sensor is processed integrated with GaAs/In_xGa_1-xAs/AlAs double barrier structures posited on its strain-sensitive region. The fabricated sensor is packaged for watertight solution, and underwater measurements are conducted in RTD\´s negative differential resistance (NDR) region. Directivity curve of the sensor follows ";8"; cosine functional form, which shows its vector sound signal detection ability, and its sensitivity reaches -184.6 dB (0 dB = 1 V/muPa) at 1 KHz.

Keywords

III-V semiconductors; aluminium compounds; gallium arsenide; hydrophones; indium compounds; piezoelectric transducers; piezoresistive devices; resonant tunnelling diodes; GaAs-InGaAs-AlAs; cosine functional form; current-voltage curves change; double barrier structures; frequency 1 kHz; negative differential resistance; piezoresistive effect; resonant tunneling diode; strain-sensitive region; underwater measurements; vector hydrophone; vector sound signal detection ability; Acoustic sensors; Diodes; Electrical resistance measurement; Gallium arsenide; Packaging; Piezoresistance; Resonant tunneling devices; Sonar equipment; Strain control; Stress; Hydrophone; negative differential resistance (NDR); piezoresistive; resonant tunneling diode (RTD);

fLanguage

English

Journal_Title

Sensors Journal, IEEE

Publisher

ieee

ISSN

1530-437X

Type

jour

DOI

10.1109/JSEN.2008.917123

Filename

4459083