Title :
Gated carbon nanotube emitter with low driving voltage
Author :
Chun Gyoo Lee ; Sang Jo Lee ; Sung Hee Cho ; Eung Joon Chi ; Byung Gon Lee ; Sang Ho Jeon ; Sang Hyuck Ahn ; Su Bong Hong ; Deok Hyeon Choe
Author_Institution :
Corporate R&D Center, Samsung SDI Co. Ltd, Yongin-City, South Korea
Abstract :
By approaching the counter electrode to the carbon nanotubes (CNT) emitter, remarkable reduction of the cathode operating voltage has been accomplished in the under-gate CNT cathode structure. The peak emission current density of 2.5 mA/cm2, which is sufficient for high brightness CNT field emission display, was obtained at the cathode-to-gate voltage of 57 V when the CNT-to-counter electrode gap was 2.2 μm. The gate current was less than 10% of the anode current. The CNT cathode with low driving voltage can help the cost-effective field emission display implemented.
Keywords :
carbon nanotubes; cathodes; electron field emission; field emission displays; 57 V; CNT cathode; CNT-to-counter electrode gap; anode current; carbon nanotube emitter; cathode operating voltage; cathode structure; cathode-to-gate voltage; counter electrode; driving voltage; field emission display; gate current; gated emitter; peak emission current density; Anodes; Carbon nanotubes; Cathodes; Counting circuits; Current density; Electrodes; Fabrication; Flat panel displays; Low voltage; Manufacturing;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.833376
