Title :
Thermal stresses in the bulk and epitaxial growth of III-V materials
Author :
Jordan, Andrew S. ; Caruso, Ronald
Author_Institution :
AT&T Bell Lab., Murray Hill, NJ, USA
Abstract :
Reviews dislocation generation by thermal stresses in the bulk growth of compound semiconductors. Wafer bowing by thermal stresses is analyzed in the GaAs/Si heteroepitaxial system. The quasi-steady-state (QSS) heat-transfer/thermal-stress model for glide dislocation formation during crystal growth is outlined. Next, the key predictions of the model are presented and related to crystal-growth practice. Finally, by a suitable extension of Timoshenko´s treatment for the bimetallic strip, the authors determine the reduction in bowing in GaAs/Si wafers for two alternative multilayer structures.<>
Keywords :
III-V semiconductors; elemental semiconductors; gallium arsenide; semiconductor epitaxial layers; semiconductor growth; silicon; slip; thermal stresses; GaAs-Si; III-V semiconductors; Timoshenko´s treatment; bimetallic strip; bulk growth; dislocation generation; glide dislocation formation; heat-transfer/thermal-stress model; multilayer structures; quasi-steady-state; thermal stresses; Crystalline materials; Epitaxial growth; Gallium arsenide; III-V semiconductor materials; Indium phosphide; Substrates; Temperature; Thermal expansion; Thermal factors; Thermal stresses;
Journal_Title :
Components, Hybrids, and Manufacturing Technology, IEEE Transactions on
