DocumentCode :
1084610
Title :
Mobility enhancement of MOSFETs on p-silicon (111) with in situ HF-vapor pre-gate oxide cleaning
Author :
Chao, Tien Sheng ; Lin, Yu Hsin ; Yang, Wen Luh
Volume :
25
Issue :
9
fYear :
2004
Firstpage :
625
Lastpage :
627
Abstract :
In this paper, we grow and characterize in detail native-oxide-free ultrathin gate oxide on silicon (111) by an advance clustered vertical furnace with in situ HF-vapor stripping of the native oxide. Excellent results are demonstrated. Gate oxide integrity is significantly improved in terms of time-to-breakdown, drain current, and transconductance. In-situ HF-vapor cleaning by a clustered vertical furnace appears to be very promising to grow high-quality native-oxide-free gate oxide on silicon (111).
Keywords :
MOSFET; carrier mobility; elemental semiconductors; silicon; vapour deposition; HF-vapor pre-gate oxide cleaning; HF-vapor stripping; MOSFET; clustered vertical furnace; drain current; gate oxide integrity; mobility enhancement; native-oxide-free gate oxide; p-silicon; time-to-breakdown; transconductance; ultrathin gate oxide; Chaos; Cleaning; Degradation; Dielectric substrates; Furnaces; MOSFETs; Oxidation; Radio frequency; Silicon; Thermal conductivity; 111; In situ HF; MOSFETs; native oxide; silicon; vapor;
fLanguage :
English
Journal_Title :
Electron Device Letters, IEEE
Publisher :
ieee
ISSN :
0741-3106
Type :
jour
DOI :
10.1109/LED.2004.834733
Filename :
1327715
Link To Document :
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