Latchup-free Schottky-barrier CMOS

A common failure mechanism in bulk CMOS integrated circuits is due to the latchup of the parasitic SCR structure. Using Schottky-barrier junctions for the source and drain of the p-channel transistors eliminates the p-n-p-n structure. A technology utilizing platinum-silicide p-channel source and drain and ion-implanted n-channel source and drain was realized demonstrating latchup resistance without many sacrifices inherent with other methods. Anomalies in the p-MOSFET characteristics are reported and discussed.