Suppression of the floating-body effect in poly-Si thin-film transistors with self-aligned Schottky barrier source and ohmic body contact structure

Author

Kuo, Po-Yi ; Chao, Tien-Sheng ; Lei, Tan-Fu

Author_Institution

Dept. of Electron. Eng., Nat. Chiao-Tung Univ., Hsinchu, Taiwan

Volume

25

Issue

9

fYear

2004

Firstpage

634

Lastpage

636

Abstract

In this letter, we developed a new self-aligned Schottky barrier source and ohmic body contact (SSOB) method that can effectively suppress the floating-body effect in poly-Si thin-film transistors (TFTs). Experimental results show that the SSOB-TFTs give higher output resistance, less threshold voltage variation, improved subthreshold characteristics, and larger breakdown voltage compared with conventional TFTs. The characteristics of the SSOB-TFTs are suitable for high-performance driving TFTs with a high output resistance and large breakdown voltage.

Keywords

Schottky barriers; contact resistance; thin film transistors; breakdown voltage; floating-body effect suppression; kink effect; ohmic body contact structure; output resistance; poly-Si thin-film transistors; self-aligned Schottky barrier source; subthreshold characteristics; threshold voltage variation; Active matrix liquid crystal displays; Chaos; Chemical vapor deposition; Circuits; Immune system; MOSFETs; Schottky barriers; Silicon; Thin film transistors; Threshold voltage; Floating-body effect; Schottky barrier source; kink effect; ohmic body contact; poly-Si TFTs;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.834635

Filename

1327718