Tri-state logic using vertically integrated Si-SiGe resonant interband tunneling diodes with double NDR

Author

Jin, Niu ; Chung, Sung-Yong ; Heyns, Roux M. ; Berger, Paul R. ; Yu, Ronghua ; Thompson, Phillip E. ; Rommel, Sean L.

Author_Institution

Dept. of Electr. & Comput. Eng., Ohio State Univ., Columbus, OH, USA

Volume

25

Issue

9

fYear

2004

Firstpage

646

Lastpage

648

Abstract

A vertically integrated npnp Si-based resonant interband tunneling diode (RITD) pair is realized with low-temperature molecular beam epitaxy by stacking two RITDs with a connecting backward diode between them. The current-voltage characteristics of the vertically integrated RITD pair demonstrates two sequential negative differential resistance regions in the forward-biasing condition. Tri-state logic is demonstrated by using the vertically integrated RITDs as the drive and an off-chip resistor as the load.

Keywords

Ge-Si alloys; integrated logic circuits; molecular beam epitaxial growth; multivalued logic; resonant tunnelling diodes; semiconductor diodes; Si-SiGe; current-voltage characteristics; double NDR; forward-biasing condition; molecular beam epitaxy; multivalued logic; negative differential resistance; off-chip resistor; resonant inter-band tunneling diode; tri-state logic; vertically integrated Si-SiGe RITD; CMOS technology; Heterojunction bipolar transistors; Joining processes; Molecular beam epitaxial growth; Multivalued logic; Programmable logic arrays; RLC circuits; Resonance; Semiconductor diodes; Tunneling; MBE; Molecular beam epitaxy; NDR; RITD; multivalued logic; negative differential resistance; resonant interband tunneling diodes; silicon; silicon germanium;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/LED.2004.833845

Filename

1327722