Title :
High-frequency performance of subthreshold SOI MESFETs
Author :
Jinman Yang ; Spann, J. ; Anderson, Richard ; Thornton, T.
Author_Institution :
Dept. of Electr. Eng., Arizona State Univ., Tempe, AZ, USA
Abstract :
Results from silicon-on-insulator (SOI) MESFETs designed for subthreshold operation are presented. The transistors have subthreshold slopes as low as 78 mV/dec and off-state drain currents approaching 1 pA/μm. Drain current saturation can be achieved with drain voltages of less than 0.5 V and with output impedance>100 M/spl Omega//spl middot/μm. The cutoff frequency of a 500-nm gate length device exceeds 1 GHz at currents significantly less than 1 μA/μm. These results suggest that subthreshold SOI MESFETs might have useful applications in mixed-signal, micropower circuit design.
Keywords :
Schottky barriers; Schottky gate field effect transistors; silicon-on-insulator; 500 nm; Schottky barriers; drain current saturation; drain voltages; micropower circuit design; mixed-signal circuit design; off-state drain currents; output impedance; silicon-on-insulator; subthreshold SOI MESFET; subthreshold slopes; transistors; CMOS technology; Cutoff frequency; Energy consumption; Etching; Implants; MESFETs; MOSFETs; Resists; Silicon on insulator technology; Voltage;
Journal_Title :
Electron Device Letters, IEEE
DOI :
10.1109/LED.2004.834245
