DocumentCode
1084729
Title
Measurement of series resistance in IMPATT diodes
Author
Adlerstein, Michael G. ; Holway, Lowell H., Jr. ; Chu, Shiou Lung G
Author_Institution
Raytheon Research Division, Lexington, MA
Volume
30
Issue
2
fYear
1983
fDate
2/1/1983 12:00:00 AM
Firstpage
179
Lastpage
182
Abstract
A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.
Keywords
Circuits; Current measurement; Diodes; Electric resistance; Electric variables measurement; Electrical resistance measurement; Frequency measurement; Gallium arsenide; Power measurement; Radio frequency;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21092
Filename
1482993
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