DocumentCode :
1084729
Title :
Measurement of series resistance in IMPATT diodes
Author :
Adlerstein, Michael G. ; Holway, Lowell H., Jr. ; Chu, Shiou Lung G
Author_Institution :
Raytheon Research Division, Lexington, MA
Volume :
30
Issue :
2
fYear :
1983
fDate :
2/1/1983 12:00:00 AM
Firstpage :
179
Lastpage :
182
Abstract :
A new method is given for determining the electrical series resistance of an IMPATT diode. The measurement is based on observation of the oscillation threshold bias current for a diode in a standard circuit. The method is applied to GaAs diodes near 40 GHz. The values obtained are used to quantitatively explain other performance characteristics of the diodes.
Keywords :
Circuits; Current measurement; Diodes; Electric resistance; Electric variables measurement; Electrical resistance measurement; Frequency measurement; Gallium arsenide; Power measurement; Radio frequency;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/T-ED.1983.21092
Filename :
1482993
Link To Document :
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