Title :
10 bit 200 MSPS GaAs BiFET sample and hold circuit
Author :
Yu, J. ; Beccue, S. ; Ho, W.J. ; Zampardi, P. ; Chang, M.F. ; Wang, K.C.
Author_Institution :
Sci. Center, Rockwell Int. Corp., Thousand Oaks, CA, USA
fDate :
8/3/1995 12:00:00 AM
Abstract :
A GaAs BiFET sample and hold circuit has been implemented and evaluated. SINAD (signal to noise and distortion) was measured to be ~60 dB, but was limited by the test setup. The device accepts a differential input and produces a differential output. The S/H is clocked differentially at rates of up to 200 MHz. 12 bit performance was expected from SPICE simulations. Despite our test setup limitations, 10 bit performance was observed at 200 MSPS with an input signal frequency of 198 MHz
Keywords :
III-V semiconductors; analogue processing circuits; gallium arsenide; monolithic integrated circuits; sample and hold circuits; timing; 12 bit; 198 MHz; 200 MHz; BiFET S/H circuit; GaAs; SINAD; differential clocking; differential input; differential output; sample/hold circuit;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19950947
