DocumentCode :
1084793
Title :
CMOS-process-independent average power dissipation macromodelling
Author :
Mather, P.J. ; Hallam, P. ; Brouwer, M.
Author_Institution :
Sch. of Eng., Huddersfield Unvi., UK
Volume :
31
Issue :
16
fYear :
1995
fDate :
8/3/1995 12:00:00 AM
Firstpage :
1337
Lastpage :
1338
Abstract :
An accurate CMOS-process-independent average power dissipation macromodel is presented for the inverter and multiple input macros, including NAND, NOR, the transmission gate, pass gate and SRAM cell. A new macro activity time period is defined and accurate macro activity estimations are achieved without the need for analogue propagation delay simulation
Keywords :
CMOS digital integrated circuits; integrated circuit modelling; CMOS-process-independent modelling; NAND gate; NOR gate; SRAM cell; average power dissipation; input macros; inverter; macro activity time period; macromodelling; pass gate; transmission gate;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19950914
Filename :
408309
Link To Document :
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