• DocumentCode
    1084793
  • Title

    CMOS-process-independent average power dissipation macromodelling

  • Author

    Mather, P.J. ; Hallam, P. ; Brouwer, M.

  • Author_Institution
    Sch. of Eng., Huddersfield Unvi., UK
  • Volume
    31
  • Issue
    16
  • fYear
    1995
  • fDate
    8/3/1995 12:00:00 AM
  • Firstpage
    1337
  • Lastpage
    1338
  • Abstract
    An accurate CMOS-process-independent average power dissipation macromodel is presented for the inverter and multiple input macros, including NAND, NOR, the transmission gate, pass gate and SRAM cell. A new macro activity time period is defined and accurate macro activity estimations are achieved without the need for analogue propagation delay simulation
  • Keywords
    CMOS digital integrated circuits; integrated circuit modelling; CMOS-process-independent modelling; NAND gate; NOR gate; SRAM cell; average power dissipation; input macros; inverter; macro activity time period; macromodelling; pass gate; transmission gate;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19950914
  • Filename
    408309
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1084793