Theoretical contribution to the design of millimeter-wave TEO´s

Systematic simulations of GaAs millimeter-wave transferred-electron devices have been performed, using a realistic model taking into account spatial nonuniformity as well as relaxation effects. Operating temperature is also considered. These simulations indicate the possibility of a fundamental accumulation layer transit mode up to 100 GHz, with higher conversion efficiency than that obtained with a harmonic mode. Significant improvement in output power is expected from InP fundamental oscillators in the upper part of the millimeter band.