DocumentCode
1084866
Title
Theoretical contribution to the design of millimeter-wave TEO´s
Author
Friscourt, Marie-Renée ; Rolland, Paul-Alain ; Cappy, A. ; Constant, Eugène ; Salmer, Georges
Author_Institution
Universite des Sciences et Techniques, Villineuve d´´Ascq Cedex, France
Volume
30
Issue
3
fYear
1983
fDate
3/1/1983 12:00:00 AM
Firstpage
223
Lastpage
229
Abstract
Systematic simulations of GaAs millimeter-wave transferred-electron devices have been performed, using a realistic model taking into account spatial nonuniformity as well as relaxation effects. Operating temperature is also considered. These simulations indicate the possibility of a fundamental accumulation layer transit mode up to 100 GHz, with higher conversion efficiency than that obtained with a harmonic mode. Significant improvement in output power is expected from InP fundamental oscillators in the upper part of the millimeter band.
Keywords
Electron devices; Equations; Frequency; Gallium arsenide; Indium phosphide; Millimeter wave devices; Millimeter wave technology; Oscillators; Power generation; Temperature;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/T-ED.1983.21104
Filename
1483005
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